Quantum Entanglement Mnf Full Version
M. Li *, Wei-Min Huang 1,2, Yan Wu 3,4, Yi-Sheng Wang 4,5, Yun-Chen Liu 4, Yu-Qiang Zhu 6, Jian-Wei Pan 6, Yu-Ao Chen 6, Chun-Hua Dong 4, Yong Wu 7, Chun-Li Wu 7, and Zheng-Fu Han 7
1School of Physics and Astronomy, Hubei University, Wuhan, 430062, China 2Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China 3Beijing Academy of Quantum Information Sciences, Haidian District, Beijing 100193, China 4Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China 5School of Physics and Astronomy, Hubei University, Wuhan, 430062, China 6Quantum Optics and Engineering Division, Institute of Physics, University of Zielona Gra, Zielona Gra, Poland 7Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China 8University of Chinese Academy of Sciences, Beijing, 100049, China
We describe a semiconductor model of a N-doped GaN quantum well within the self-consistent GW approximation, and we investigate the electronic and optical properties of the model using a combination of quantum mechanical and many-body methods. In a doped GaN quantum well, the hole is confined in a GaN quantum well (QW) which is sandwiched by AlN quantum barriers. The Si-doped quantum well is placed above the GaN matrix. The number of Si-dopants in the quantum well is controlled by a combination of self-consistent G-amendation and many-body methods.